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RF devices R&D

RF devices R&D

Development of ultra-fast transistors (HEMT, HBT) for RF devices based on compound materials such as InP and GaAs.
Manufacturing services for single transistor devices and MMIC.

 

Capability of implementing ultra-high frequencies and ultra-low noise, making them suitable for research and development areas for 6G infrastructure and non-communication fields such as tera-hertz imaging.



RF


RF

The QSI research team researches and develops technological solutions and provides services as follows.

1
p-HEMT
100㎚ E-mode pHEMT
2
p-HEMT
80㎚ E-mode pHEMT
3
InGaAs HBT (TBD)
500㎚ HBT
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